发明名称 METHOD FOR PROCESSING PHOTORESIST LAYER AND METHOD FOR MANUFACTURING PATTERN FORMING SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for processing a photoresist layer and a method for manufacturing a pattern forming substrate by which a plurality of line patterns can be formed in a short period of time. <P>SOLUTION: The method for processing a photoresist layer and the method for manufacturing a pattern forming substrate include: a setting step of fixing a plurality of substrates 61 each having a photoresist layer 62 to the respective setting faces 22 of a support member 2 having a plurality of setting faces 22 placed equidistant from a predetermined center axis 2A; and an exposure step of allowing a laser beam to exit from a head 3, while rotating at least either the head 3 that projects a laser beam onto the photoresist layer 62 or the support member 2 around the center axis 2A as well as moving at least either the head 3 or the support member 2 along the center axis 2A. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009282277(A) 申请公布日期 2009.12.03
申请号 JP20080134017 申请日期 2008.05.22
申请人 FUJIFILM CORP 发明人 OGAWA SHOTARO;USAMI YOSHIHISA
分类号 G03F7/20;G03F7/24 主分类号 G03F7/20
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