| 摘要 |
PROBLEM TO BE SOLVED: To provide an erasure method of a nonvolatile memory device, in which an even bit line and an odd bit line are simultaneously selected and verified when verifying the erasure of the nonvolatile memory device. SOLUTION: The method includes a step of erasing a selected memory block, a step of examining voltage level changes of entire bit lines according to a memory cell erasure status by precharging the entire bit lines of the memory block, a step of reading out data by a first bit line voltage level among the entire bit lines, a step of reading out data by a second bit line voltage level continuously after the first bit line data readout, and a step of deciding an erasure verification result according to the readout result. COPYRIGHT: (C)2010,JPO&INPIT |
