发明名称 INSULATING FILM FOR CAPACITOR ELEMENT, CAPACITOR ELEMENT, AND SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an insulating film for a capacitor element, and the capacitor element, in which the coexistence of a large dielectric ratio and a leakage current suppression is possible, further being excellent also in the uniformity of characteristics. <P>SOLUTION: The insulating film for the capacitor element is adopted, which is the insulating film used for the capacitor element having a pair of electrodes and the insulating film sandwiched by the pair of electrodes, wherein a metal element which constitutes a metal oxide whose band gap is large to niobium pentoxide is added to the niobium pentoxide. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009283658(A) 申请公布日期 2009.12.03
申请号 JP20080134015 申请日期 2008.05.22
申请人 ELPIDA MEMORY INC 发明人 TANIOKU MASAMI
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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