| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a first silicide layer and second silicide layer in which any high resistance silicide layer is not formed on the surface, while preventing disconnection between the first and second silicide layers. Ž<P>SOLUTION: The semiconductor apparatus includes: a first MIS transistor NTr having a first silicide layer 20a1 formed on a first gate electrode 14a; and a second MIS transistor PTr having a second silicide layer 22b1 formed on the second gate electrode 14b. The first gate electrode 14a and the second gate electrode 14b are integrally formed on a semiconductor substrate 10, and the first silicide layer 20a1 and the second silicide layer 22b1 are connected while interposing a third silicide layer 23, whose film thickness is thicker than that of the first silicide layer 20a1 and the second silicide layer 22b1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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