发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT USING A SELECTIVE DISPOSAL SPACER TECHNIQUE AND SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURED THEREBY |
摘要 |
Methods of manufacturing a semiconductor integrated circuit using selective disposable spacer technology and semiconductor integrated circuits manufactured thereby. The method includes providing a semiconductor substrate; forming gate patterns on the semiconductor substrate, wherein a first space and a second space wider than the first space are disposed between the gate patterns; forming a first impurity region in the semiconductor substrate under the first space and forming a second impurity region in the semiconductor substrate under the second space; forming insulation spacers on sidewalls of the gate patterns, wherein a portion of the second impurity region is exposed and the first impurity region is covered with the insulation spacers; etching the insulation spacers, wherein an opening width of the second impurity region is enlarged and wherein the etching is carried out with a wet etching process; and forming an interlayer insulating layer on the overall structure including the gate patterns.
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申请公布号 |
US2009294823(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090538798 |
申请日期 |
2009.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SANG-EUN;SONG YUN-HEUB |
分类号 |
H01L21/76;H01L27/105;H01L21/336;H01L21/8234;H01L21/8242;H01L21/8247;H01L27/04;H01L27/088;H01L27/10;H01L27/115;H01L29/76;H01L29/78;H01L29/788;H01L29/792;H01L29/94 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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