发明名称 SEMICONDUCTOR COMPONENT WITH MIM CAPACITOR
摘要 A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.
申请公布号 US2009294907(A1) 申请公布日期 2009.12.03
申请号 US20080131728 申请日期 2008.06.02
申请人 TEGEN STEFAN;MUEMMLER KLAUS;BAARS PETER;WUNNICKE ODO 发明人 TEGEN STEFAN;MUEMMLER KLAUS;BAARS PETER;WUNNICKE ODO
分类号 H01L29/94;H01L21/20 主分类号 H01L29/94
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