发明名称 SCAN FLIP-FLOP DEVICE
摘要 A scan flip-flop device has a scan flip-flop, a Nch insulated gate field effect transistor and a Pch insulated gate field effect transistor. The Nch insulated gate field effect transistor is located on an output side the scan flip-flop. The Nch insulated gate field effect transistor turns off and dose not output a signal when a test enable signal is in a disable mode. The Pch insulated gate field effect transistor is located between a higher voltage source and an output side of the Nch insulated gate field effect transistor. The Pch insulated gate field effect transistor turns on when a test enable signal is in a disable mode. The Pch insulated gate field effect transistor sets a SO port at a high level voltage.
申请公布号 US2009300448(A1) 申请公布日期 2009.12.03
申请号 US20090466600 申请日期 2009.05.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TOMITA YOSHIHIRO;UCHINO YUKINORI
分类号 G01R31/3177;G06F11/25 主分类号 G01R31/3177
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