发明名称 |
DOPANT CONFINEMENT IN THE DELTA DOPED LAYER USING A DOPANT SEGREGRATION BARRIER IN QUANTUM WELL STRUCTURES |
摘要 |
A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1x108 cm-2 to be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.
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申请公布号 |
US2009298266(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090538828 |
申请日期 |
2009.08.10 |
申请人 |
HUDAIT MANTU K;BUDREVICH AARON A;LOUBYCHEV DMITRI;KAVALIEROS JACK T;DATTA SUMAN;FASTENAU JOEL M;LIU AMY W |
发明人 |
HUDAIT MANTU K.;BUDREVICH AARON A.;LOUBYCHEV DMITRI;KAVALIEROS JACK T.;DATTA SUMAN;FASTENAU JOEL M.;LIU AMY W. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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