| 摘要 |
PURPOSE: A method for manufacturing semiconductor element is provided to improve the uniformity of the copper routing thickness by forming the stopping layer having large selectivity to copper. CONSTITUTION: The inter-layer insulating film(110) is evaporated on the semiconductor substrate(100) in which the signal wire is formed. The stopping layer(120) of the chemical mechanical polishing process is evaporated. The stopping layer includes the material which has a big selectivity to copper. By the photoresist pattern being formed on the top of the stopping layer, the via hole or the trench(145) is formed using this as mask. The copper is evaporated on the semiconductor substrate in which the via hole or the trench is formed. The copper deposited semiconductor substrate is polished to the top of the stopping layer through the chemical mechanical polishing process.
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