| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a production process of a CIS-based thin film solar cell which attains high photoelectric conversion efficiency. <P>SOLUTION: A production process of a CIS-based thin film solar cell includes steps for forming a back surface electrode layer on a substrate, for forming a p-type CIS-based light absorption layer thereon, and for forming an n-type transparent conductive film further thereon, wherein the step of forming a p-type CIS-based light absorption layer consists of a step of forming a metal precursor film (30a) which is at least equipped with first metal layers (31, 32) containing a group I element and a second metal layer (33) containing a group III element, and a step of selenizing and/or sulfating the metal precursor film, and the step of forming the metal precursor film includes a step of forming any one of the first metal layers (31, 32) and the second metal layer (33) of at least two layers, i.e., the layer (31) containing an alkali metal and the layer (32) not containing an alkali metal. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
