发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device that is resistant to external stresses and electrostatic discharge and is reliable, even when achieving thinning and miniaturization, prevents poor quality in shape and characteristics caused by the external stresses or electrostatic discharge in a manufacturing process, and has a satisfactory yield. <P>SOLUTION: A pair of conductive shields for covering a semiconductor integrated circuit, while sandwiching it prevents electrostatic discharge damage (malfunction of circuits and damage to semiconductor elements) by electrostatic discharge in the semiconductor integrated circuit. Also, by a pair of insulators for clamping the semiconductor integrated circuit, the reliable semiconductor device having resistance is provided while achieving thinning and miniaturization. Also in a manufacturing process, poor quality in shapes and characteristics caused by external stresses or electrostatic discharge is prevented, thus manufacturing the semiconductor device with improved yield. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009283777(A) 申请公布日期 2009.12.03
申请号 JP20080135796 申请日期 2008.05.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;OIKAWA YOSHIAKI;SHOJI HIRONOBU;SHIONOIRI YUTAKA;KATO KIYOSHI;NAKATA MASATAKA
分类号 H01L21/822;G06K19/07;G06K19/077;H01L27/04;H01L29/786 主分类号 H01L21/822
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