| 摘要 |
A sputtering apparatus for performing a film forming process on a substrate surface of a disk-like substrate while rotating the substrate around a rotation axis line, the sputtering apparatus including a chamber, a table that rotates the substrate around the rotation axis line, and a sputtering cathode that has a cathode surface facing the substrate. Assuming that a distance between the rotation axis line and a peripheral edge of the substrate is R, a distance between the rotation axis line and a center point of the cathode surface is OF, and a height from the substrate surface to the center point of the cathode surface is TS, the following relationship is substantially satisfied: R:OF:TS=100:175:190±20. In addition, the rotation axis line intersects a normal line passing through the center point of the cathode surface, and an intersection angle thereof falls within a range of 22°±2°.
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