发明名称 |
Phase change random access memory and methods of manufacturing and operating same |
摘要 |
A phase change memory device includes a switching device, a phase change storage node connected to the switching device, and a gate electrode which is spaced apart from the phase change storage node and increases an electrical resistance of the storage node during a reset programming operation. The gate electrode may be disposed around the phase change storage node, and may be used for applying an electric field to the phase change storage node.
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申请公布号 |
US2009296457(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090455007 |
申请日期 |
2009.05.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUH DONG-SEOK |
分类号 |
G11C11/00;H01L21/00;H01L29/02 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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