INTEGRATED CIRCUIT HAVING LOCALIZED EMBEDDED SiGe AND METHOD OF MANUFACTURING

摘要

An integrated circuit (IC) with localized SiGe embedded in a substrate and a method of manufacturing the IC is provided. The method includes forming recesses in a substrate on each side of a gate structure and remote from a shallow trench isolation structure. The method further includes growing a stress material within the recesses such that the stress material is bounded on its side only by the substrate.