SEMICONDUCTOR MEMORY DEVICE HAVING REFRESH CIRCUIT AND THEREFOR WORD LINE ACTIVATING METHOD

摘要

PURPOSE: A semiconductor memory device having a refresh circuit for reducing peak currents and a word line activating method according to the same are provided to reduce the peak current in a refresh operation by activating the same number of word lines irrespective of a location of a memory block. CONSTITUTION: A pulse generating section(150) logically combines an inverted column address strobe signal and an inverted row address strobe signal and a refresh signal. The pulse generating section generates a refresh pulse. A refresh counter(200) includes binary counters(201-213). The refresh counter generates an address for refresh by counting the refresh pulse. The address for refresh is offered as an input of unit pre-decoders(10a-10e) composing a pre-decoding part(10). A counting increase switching unit(100) determines a refresh object memory cell in a refresh operation mode. The counting increase switching unit performs a function of increasing the address for refresh if the refresh object memory cell belongs to an edge cell block.