| 摘要 |
PROBLEM TO BE SOLVED: To suppress "negative droop characteristics" in a surface emitting laser element. SOLUTION: The surface emitting laser element includes a resonator structural body including an active layer 105, semiconductor DBRs (distributed Bragg reflectors) (lower semiconductor DBR 103, upper semiconductor DBR 107) provided so as to sandwich the resonator structural body, and an oxidized confinement structure that is formed inside the upper semiconductor DBR 107 by selective oxidation of a layer to be selectively oxidized containing Al and capable of confining the injection current and the lateral mode of oscillation light, at the same time. Then, the thickness of the layer to be selectively oxidized is 28 nm and the temperature, when an oscillation threshold current becomes a minimum value is substantially 17°C. Furthermore, when a square-wave current pulse having a pulse period of 1 ms and a pulse width of 500μs is supplied, (P1-P2)/P2=-0.05 by using a light output P1 10 ns after the supplying and a light output P2 1μs after the supplying. COPYRIGHT: (C)2010,JPO&INPIT |
