| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayer type nonvolatile storage that has satisfactory electric connection and is easily machined, and to provide its manufacturing method. Ž<P>SOLUTION: In the nonvolatile storage, a plurality of unit memory layers are stacked. Each unit memory layer includes first wiring extending in a first direction, second wiring extending in a second direction in nonparallel with the first one, and a recording layer provided between the first wiring and the second wiring. One of the first wiring and the second wiring that one of the plurality of unit memory layers includes projects in a third direction in nonparallel with an extension direction of either wiring within a first surface including the first and second directions as compared with the wiring extending in a direction in parallel with one of the first wiring and the second wiring that any of the other layers of the plurality of unit memory layers includes. The nonvolatile storage includes a connection section connected to an interlayer connection body extending in a direction in nonparallel with the first surface. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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