| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of reducing crystal defects in a diffusion layer and further reducing a chip size by reducing the dead area. SOLUTION: The manufacturing method of the semiconductor device comprises: a process for forming a trench 5 in a base material 1 made of silicon; a process for forming a buffer layer 6 which relaxes the stresses on inner surfaces 5a, 5b in the trench 5, by implanting ions of an electrically inactive element to silicon for making an amorphous form; a process for filling an insulator 7 into the trench 5 in which the buffer layer 6 is formed; a process for injecting impurities into regions P, N separated by the trench 5, filled with the insulator 7 of the base material 1; a heat-treatment process for making injected impurities diffuse thermally by heat-treating the base material 1; an insulator removal process for removing the insulator 7 after the heat-treatment process; a process for forming an oxide film, by oxidizing the buffer layer 6 after the insulator removal process; an oxide film removal process for removing the oxide film; and a process for oxidizing the inner surface of the trench 5 exposed by the oxide film removal process. COPYRIGHT: (C)2010,JPO&INPIT
|
