| 摘要 |
A nonvolatile memory device includes a trimming cell array storing trimming data for a plurality of operating modes, a trimming cell sense amplifier sensing the trimming data and a trimming cell latch storing the sensed trimming data. A plurality of trimming circuits performs trimming operations in response to a trimming control signals derived from trimming data. A single temporary trimming control logic unit receives externally provided control data and controls operation of a single summation circuit. The summation circuit controls the operation of the trimming circuits by respectively and selectively varying the trimming control signal provided to each one of the plurality of trimming circuits in response to the externally provided control data.
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