FINAL POLISHING PROCESS FOR SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER

摘要

Disclosed is a final polishing process for a silicon single crystal wafer as the final polishing step among a plurality of polishing steps wherein a silicon single crystal wafer is polished while having a polishing slurry intervene between the silicon single crystal wafer and a polishing cloth. In this final polishing process for a silicon single crystal wafer, the polishing rate is set at not more than 10 nm/min. Also disclosed is a silicon single crystal wafer polished by such a final polishing process. This final polishing process enables to obtain a silicon single crystal wafer which is reduced in PID (Polishing Induced Defects).