| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing more uniformly forming ruggedness on a light take-out surface and stably mass-producing a nitride compound semiconductor LED which improves light take-out efficiency. <P>SOLUTION: The method for manufacturing a nitride compound semiconductor LED includes the steps of: forming a nitride semiconductor laminate containing Ga by crystal-growing at least a first conductive type semiconductor layer 4, a light emitting layer 5 and a second conductive type semiconductor layers 6, 7 on an epitaxial substrate 1 in this order; forming a reflection electrode layer on a surface of the nitride semiconductor laminate at a side of the second conductive type semiconductor layer; releasing the epitaxial substrate; producing ruggedness on the nitride semiconductor laminate by etching the surface of the nitride semiconductor laminate from which the epitaxial substrate is released; and performing O<SB>2</SB>plasma treatment or O<SB>3</SB>ashing treatment on the nitride semiconductor laminate to which dry etching is applied. <P>COPYRIGHT: (C)2010,JPO&INPIT |
