| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method which provides a high-quality semiconductor device with a high manufacturing yield, and in which a wafer is hardly damaged, accordingly, a crack or a chip hardly occurs in thinning the wafer, and a trouble hardly occurs in a circuit part as well. <P>SOLUTION: In this method for manufacturing of a semiconductor device including a grinding process of grinding a surface of a wafer on the side opposite to a circuit forming surface thereof, cutout parts of which the depth is smaller than the thickness of the wafer is formed by laser irradiation on the surface of the wafer on the circuit formation side before the grinding process. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
