| 摘要 |
PROBLEM TO BE SOLVED: To improve controllability of a selection gate without increasing the length of the selection gate, in relation to a selection gate provided for a memory cell. SOLUTION: This semiconductor device including a selection gate S1 provided for a memory cell A1 has a Tri-gate structure, wherein the upper surface of a gate insulation film 9 formed on a channel of the selection gate S1 is higher than a part or the whole of the upper surface of an element separation region 10 of the selection gate S1. COPYRIGHT: (C)2010,JPO&INPIT
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