| 摘要 |
Breakdown voltage BVdss is enhanced and ON-resistance reduced in RESURF devices (40, 60, 80, 80', 80''), e.g., LDMOS transistors, by careful charge balancing, even when body (44, 44', 84, 84') and drift (50, 50', 90, 90') region charge balance is not ideal, by: (i) providing a plug or sinker (57) near the drain (52, 92) and of the same conductivity type extending through the drift region (50, 50', 90, 90') at least into the underlying body region (44, 44' 84, 84'), and/or (ii) applying bias Viso to a surrounding lateral doped isolation wall (102) coupled to the device buried layer (42, 82), and/or (iii) providing a variable resistance bridge (104) between the isolation wall (102) and the drift region (50, 50', 90, 90'). The bridge (104) may be a FET (110) whose source-drain (113, 114) couple the isolation wall (102) and drift region (50, 50', 90, 90') and whose gate (116) receives control voltage Vc, or a resistor (120) whose cross-section (X, Y, Z) affects its resistance and pinch-off, to set the percentage of drain voltage coupled to the buried layer (42, 82) via the isolation wall (102).
|
