SEMICONDUCTOR DEVICE COMPRISING A CHIP INTERNAL ELECTRICAL TEST STRUCTURE ALLOWING ELECTRICAL MEASUREMENTS DURING THE FABRICATION PROCESS

摘要

A test structure or a circuit element acting temporarily as a test structure may be provided within the die region (210) of sophisticated semiconductor devices, while probe pads (241A, 241B) may be located in the frame (230) in order to not unduly consume valuable die area. The electrical connection between the test structure and the probe pads (241A, 241B) may be established by a conductive path (245, 246) including a buried portion (245A, 246A), which extends from the die region (210) into the frame below a die seal (220), thereby maintaining the electrical and mechanical characteristics of the die seal (220).