| 摘要 |
<p>A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer At least one dopant is applied to the semiconductor substrate A first portion of an epitaxial layer is grown on the seed layer A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer A remaining portion of the epitaxial layer is grown During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed and the insulator layers and which decreases monotonically with increasing distance from the interface within the semiconductor substrate and the epitaxial layer</p> |
