发明名称 |
CHEMICAL-MECHANICAL GRINDING DEVICE AND METHOD THEREOF |
摘要 |
A chemical mechanical polishing (CMP) apparatus for planarizing a semiconductor wafer includes a wafer carrier for loading and fixing a semiconductor wafer to be polished and a polishing platen rotating at a constant speed, disposed at a lower portion of the wafer carrier. A polishing pad is provided on an upper surface of the polishing platen, and is in contact with a surface of the semiconductor wafer. A spiral slurry feed line supplies a slurry solution to the polishing pad. An end of the spiral slurry feed line is provided with a plurality of nozzles and the spiral slurry feed line is connected to a deionized water feed line that is opened or closed by a valve. Accordingly, abrasives are prevented from being precipitated, and the slurry solution is uniformly supplied to the semiconductor wafer, to thereby enhance polishing uniformity. |
申请公布号 |
KR0151102(B1) |
申请公布日期 |
1998.10.15 |
申请号 |
KR19960005097 |
申请日期 |
1996.02.28 |
申请人 |
SAMSUNG ELECTRONICS CO.,LTD |
发明人 |
LEE, BYUNG-HOON;LEE, JOON-HEE |
分类号 |
B24B1/00;B24B37/00;B24B37/20;B24B37/24;B24B57/02;H01L21/304;H01L21/306;H01L21/3105 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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