发明名称 PIEZOELECTRIC SINGLE CRYSTAL INGOT, ITS MANUFACTURING METHOD, AND PIEZOELECTRIC SINGLE CRYSTAL ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide: an all solid-solution type piezoelectric single crystal ingot which is composed of a relaxer having a compositional formula of Pb(Mg,Nb)O<SB>3</SB>and lead titanate having a composition of PbTiO<SB>3</SB>, wherein compositional variation of lead titanate is suppressed in the single crystal growth direction; a method for manufacturing the same; and a piezoelectric single crystal element which is manufactured from the all solid-solution type piezoelectric single crystal ingot at a low cost and has uniform piezoelectric properties. <P>SOLUTION: In manufacturing of the all solid-solution type piezoelectric single crystal ingot 1 composed of a relaxer having a compositional formula of Pb(Mg,Nb)O<SB>3</SB>and lead titanate having a composition of PbTiO<SB>3</SB>, a raw material of the relaxer is continuously fed into a growing crucible in consideration of the segregation coefficient of the lead titanate to the relaxer so that the compositional ratio of the lead titanate is not varied monotonically in the single crystal growth direction A and the variation of the compositional ratio is kept within a range of±2.0 mol% over the length L of≥30 mm. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009280413(A) 申请公布日期 2009.12.03
申请号 JP20080130909 申请日期 2008.05.19
申请人 JFE MINERAL CO LTD 发明人 MATSUSHITA MITSUYOSHI
分类号 C30B29/32;C30B11/04;H01L41/18;H01L41/187;H01L41/39;H01L41/41 主分类号 C30B29/32
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