| 摘要 |
PROBLEM TO BE SOLVED: To increase data writing/erasing speed by suppressing leak current. SOLUTION: A multilayer film S is constituted of a layer structure of a silicon oxide film 7, a silicon nitride film 8, and a metal oxide film 9, and the multilayer film S is formed by being interposed between a control gate electrode CG and a silicon nitride film 6. COPYRIGHT: (C)2010,JPO&INPIT |
