发明名称 |
RESISTANCE VARIABLE MEMORY DEVICE AND METHOD OF WRITING DATA |
摘要 |
A method of programming a resistance variable memory cell to a given logic state includes applying a first programming current to the memory cell, executing a verify read of the memory cell by sensing a logic state of the memory cell, and applying a second programming current to the memory cell when the sensed logic state is different than the given logic state, where the second programming current is greater than the first programming current
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申请公布号 |
US2009296458(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090471526 |
申请日期 |
2009.05.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG HYUK;LEE KWANGJIN;HA DAEWON;JEONG GITAE;KANG DAEHWAN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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