发明名称 |
Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same |
摘要 |
A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si02 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 A or more. An interface trap density of the Si02 can be as high as lo∥/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
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申请公布号 |
US2009298268(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090457586 |
申请日期 |
2009.06.16 |
申请人 |
KWON JANG-YEON;HAN MIN-KOO;CHO SE-YOUNG;PARK KYUNG-BAE;KIM DO-YOUNG;LEE MIN-CHEOL;HAN SANG-MYEON;NOGUCHI TAKASHI;PARK YOUNG-SOO;JUNG JI-SIM |
发明人 |
KWON JANG-YEON;HAN MIN-KOO;CHO SE-YOUNG;PARK KYUNG-BAE;KIM DO-YOUNG;LEE MIN-CHEOL;HAN SANG-MYEON;NOGUCHI TAKASHI;PARK YOUNG-SOO;JUNG JI-SIM |
分类号 |
H01L21/205;H01L21/336;C23C16/24;H01L21/20;H01L21/316;H01L29/49;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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