发明名称 Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon
摘要 A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor, which are vapor deposited at a fixed temperature on relatively inexpensive buffered substrates, such as glass. Such films could have widespread application in photovoltaic and display technologies.
申请公布号 US2009297774(A1) 申请公布日期 2009.12.03
申请号 US20080154802 申请日期 2008.05.28
申请人 CHAUDHARI PRAVEEN 发明人 CHAUDHARI PRAVEEN
分类号 B32B5/16 主分类号 B32B5/16
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