| 摘要 |
PURPOSE: A method of wafer back grinding is provided to prevent the deionized water from flowing to the top of the wafer substrate by using the protective film between the back grinding tape and wafer substrate. CONSTITUTION: The semiconductor device is formed on the wafer substrate(S1). The protective film is formed in order to cover the top of the wafer substrate in which the semiconductor device is formed(S2). The back grinding tape is attached in order to altogether cover the top of the protective film(S3). The lower-part of the wafer substrate is removed(S4). The bag grinding tape is removed(S5). The protective film formed on the top of the wafer substrate is removed(S6).
|
