MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC STORAGE DEVICE, AND MAGNETIC MEMORY DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a structure can prevent diffusion of an element such as Ge in a reference layer while keeping exchange coupling between the reference layer and other layer, in a spin valve film of a CPP magnetoresistive effect element. Ž<P>SOLUTION: A diffusion prevention layer formed of an Al thin film is formed on at least either of a lower part and an upper part of the reference layer included in a spin valve layer of the CPP magnetoresistive effect element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž