| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a mirrorbit semiconductor, which is capable of forming an upper oxide film of an ONO (Oxide-Nitride-Oxide) film thicker than a lower oxide film by one-time oxidation treatment. SOLUTION: A step of laminating a first oxide film 11, a nitride film 12 having a thinner film thickness than the first oxide film 11, a second oxide film 13 having a thinner film thickness than the first oxide film 11, and a gate electrode 14 on a substrate 10, a step of exposing a part of the nitride film 12 by removing end parts of the first oxide film 11 and end parts of the second oxide film 13, a step of forming a third oxide film 15 on the substrate 10 from which the first oxide film 11 is removed and forming an oxide film thicker than the third oxide film 15 having a fourth oxide film 16 and a fifth oxide film 17 integrated therein by oxidizing an exposed portion of the nitride film 12 to form the fourth oxide film 16 and forming the fifth oxide film 17 around the gate electrode 14, and a step of forming a charge storage layer 18a between the third oxide film 15 and the fourth oxide film 16 are performed in this order. COPYRIGHT: (C)2010,JPO&INPIT
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