发明名称 VOLTAGE SETTING CIRCUIT, VOLTAGE SETTING METHOD, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a voltage setting circuit and a voltage setting method, for performing correction of setting voltage after packaging with high accuracy and high yield by using a fuse for writing of bit data to a storage means and appropriately determining whether blowout of the fuse is performed or not, and a semiconductor integrated circuit device using the same. SOLUTION: The circuit includes the storage means 10 which stores bit databased on a setting voltage by electrically blowing down a fuse MF provided in conformation to each bit based on the bit data; a blowout determination circuit 20 which determines whether the fuse MF is electrically broken by blowout or not, and outputs the determination result as serial data; a latch circuit 30 which temporarily stores the serial data output from the circuit 20, converts and outputs the data as parallel data; and a resistance value setting circuit 50 which sets a resistance value to output the setting voltage based on the parallel data. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009283505(A) 申请公布日期 2009.12.03
申请号 JP20080131263 申请日期 2008.05.19
申请人 MITSUMI ELECTRIC CO LTD 发明人 YAMAGUCHI KOICHI;KIMURA DAISUKE;KITAMURA IWAO
分类号 H01L21/822;H01L21/66;H01L21/82;H01L27/04 主分类号 H01L21/822
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