发明名称 |
MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF-ALIGNED AIR GAPS BETWEEN CLOSELY SPACED METAL LINES |
摘要 |
Air gaps may be provided in a self-aligned manner with sub-lithography resolution between closely spaced metal lines of sophisticated metallization systems of semiconductor devices by recessing the dielectric material in the vicinity of the metal lines and forming respective sidewall spacer elements. Thereafter, the spacer elements may be used as an etch mask so as to define the lateral dimension of a gap on the basis of the corresponding air gaps, which may then be obtained by depositing a further dielectric material.
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申请公布号 |
US2009294898(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090400983 |
申请日期 |
2009.03.10 |
申请人 |
FEUSTEL FRANK;WERNER THOMAS;FROHBERG KAI |
发明人 |
FEUSTEL FRANK;WERNER THOMAS;FROHBERG KAI |
分类号 |
H01L23/58;H01L21/764 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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