发明名称 METHODS AND SYSTEMS FOR USING RESISTIVITY OF SENSOR FILM IN AN ELEMENT SHUNT
摘要 A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced from the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.
申请公布号 US2009296285(A1) 申请公布日期 2009.12.03
申请号 US20080130389 申请日期 2008.05.30
申请人 ARAKI SATORU;HONG YING;LEE EDWARD HIN PONG;LIN TSANN;SEAGLE DAVID JOHN 发明人 ARAKI SATORU;HONG YING;LEE EDWARD HIN PONG;LIN TSANN;SEAGLE DAVID JOHN
分类号 G11B5/33;B44C1/22;G01R33/18;H01L21/00 主分类号 G11B5/33
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