| 摘要 |
A nonvolatile semiconductor memory device includes: a semiconductor member; a memory film provided on a surface of the semiconductor member and being capable of storing charge; and a plurality of control gate electrodes provided on the memory film, spaced from each other, and arranged along a direction parallel to the surface. Average dielectric constant of a material interposed between one of the control gate electrodes and a portion of the semiconductor member located immediately below the control gate electrode adjacent to the one control gate electrode is lower than average dielectric constant of a material interposed between the one control gate electrode and a portion of the semiconductor member located immediately below the one control gate electrode.
|
