SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a semiconductor device equipped with a thin film transistor (126) and a thin film diode (127). The semiconductor layer (109t) of the thin film transistor (126) and the semiconductor layer (109d) of the thin film diode (127) are crystalline semiconductor layers formed by crystallizing the same amorphous semiconductor film. The semiconductor layer (109t) of the thin film transistor (126) contains a catalyst element that works to accelerate crystallization of the amorphous semiconductor film. The semiconductor layer (109d) of the thin film diode (127) contains virtually no catalyst element.