METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL

摘要

Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores.  The method of producing a silylated porous insulating film (204c) includes a process whereby a porous insulating film (204b) having a plurality of pores is formed, and a process wherein a silylating material vapor (210) obtained by vaporizing silylating material containing organic silane compound having a hydrophobic group and polymerization inhibitor which inhibits the auto-polymerization of said organic silane compound is caused to act upon the porous insulating film (204b)