| 摘要 |
<p>A highly-integrated magnetic memory which does not require switching of the current direction at the time of rewrite and to which spin torque magnetization reversal is applied. The magnetic memory includes a memory cell in which a magnetization fixed layer of a ferromagnetic material, a nonmagnetic layer, a recording layer of a ferromagnetic material, a nonmagnetic layer, and a magnetization rotation assist layer of a ferromagnetic material are formed. Whether the magnetization direction of the recording layer is generally parallel or antiparallel to that of the magnetization fixed layer brings about recording. The magnetization directions of the magnetization fixed layer, recording layer, and magnetization rotation assist layer are all generally parallel to the plane of the magnetization layer, and the magnetization direction of the magnetization rotation assist layer is generally perpendicular to that of the magnetization fixed layer. The write current is flowed from the magnetization fixed layer to the recording layer when the magnetization direction of the recording layer is changed from the direction parallel to the magnetization direction of the magnetization fixed layer to the that antiparallel to the magnetization direction thereof and also when the magnetization direction of the recording layer is changed from the direction antiparallel to the magnetization direction of the magnetization fixed layer to that parallel to the magnetization direction thereof.</p> |
