METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming pattern of semiconductor device is provided to simplify the process by using the simple SPT(Spacer Patterning Technology) process of spin on coating method. CONSTITUTION: The lamination film of the antireflection film(112) and etched layer(110) is formed at the upper part of the substrate(100). The photoresist pattern(114a) is formed at the upper part of the antireflection film. The silicon containing RELACS layer is formed in the antireflection film including the photoresist pattern. The silicon containing RELACS layer is eliminated and the silicon containing RELACS layer spacer(116a) is formed in the sidewall of the photoresist pattern. The photoresist pattern is removed. The etched layer pattern are formed to etch the antireflection film and etched layer by using the spacer as the mask.