发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR |
摘要 |
PURPOSE: A flat panel display for including a TFT(Thin Film Transistor) for performing an ohmic contact of a metal electrode and an oxide semiconductor layer, and a manufacturing method thereof are provided to form an ohmic contact layer with high carrier concentration by processing the oxide semiconductor layer through a plasma. CONSTITUTION: A gate electrode(14) is formed on a substrate. An oxide semiconductor layer(18a) comprises a channel, a source and a drain region insulated with a gate insulating layer(16). A source and drain electrode are connected to source and drain region. An ohmic contact layer(18b) is allowed in between a source and drain region and source and drain electrode. The ohmic contact layer includes the oxide semiconductor layer with carrier concentration high than source and drain region. |
申请公布号 |
KR20090124527(A) |
申请公布日期 |
2009.12.03 |
申请号 |
KR20080050802 |
申请日期 |
2008.05.30 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
JEONG, JONG HAN;KIM, KWANG SUK;JEONG, JAE KYEONG;YANG, HUI WON;MO, YEON GON |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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