发明名称 ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER
摘要 A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.
申请公布号 WO2009097181(A3) 申请公布日期 2009.12.03
申请号 WO2009US30708 申请日期 2009.01.12
申请人 APPLIED MATERIALS, INC.;CARDUCCI, JAMES, D.;LO, KIN PONG;BERA, KALLOL;KUTNEY, MICHAEL, C.;MILLER, MATTHEW, L. 发明人 CARDUCCI, JAMES, D.;LO, KIN PONG;BERA, KALLOL;KUTNEY, MICHAEL, C.;MILLER, MATTHEW, L.
分类号 H05H1/34;H01L21/3065 主分类号 H05H1/34
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