| 摘要 |
PURPOSE: A voltage generating circuit and a non-volatile memory device including the same are provided to reduce errors of data reading by varying data read voltage according to a threshold voltage level of a programmed memory cell as well as ambient temperature. CONSTITUTION: A first voltage generation part(410) outputs operation voltage and second voltage according to an operation voltage option bit and a voltage option bit. A second voltage generation part(420) outputs first voltage according to the operation voltage. A third voltage generation part(430) outputs the first voltage according to a temperature change option bit as third voltage. A buffer part(440) outputs the third voltage as driving voltage. A comparison amplifier(450) compares the second voltage of the first voltage generation part and the third voltage according to a resistance ratio. The comparison amplifier outputs the amplified voltage as read voltage.
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