发明名称 APPARATUS AND METHOD FOR WAFER TREATMENT IN A SINGLE PIECE TYPE, AND APPARATUS AND METHOD FOR MANUFACTURING EPITAXIAL WAFER USING THE SAME
摘要 PURPOSE: A single wafer processing apparatus, an apparatus and a method for manufacturing an epitaxial wafer using the same are provided to perform a wafer process of high efficiency and high quality by supplying a cleaning solution and an etching solution suitable for a front surface and a rear surface of a wafer. CONSTITUTION: A single wafer processing apparatus includes a plurality of rotating bodies(210) in which a wafer(10) is mounted, a rotary shaft(220) for rotating the rotating bodies, and a spray unit which sprays a cleaning solution and an etching solution on the wafer mounted in the rotating bodies. A groove is formed according to an outer circumference of a side surface of the rotating bodies. The wafer is mounted by fixing an edge of the wafer to the groove. The rotary shaft rotates each rotating body around a central shaft of the rotating bodies. The spray unit includes a front side nozzle(232) which sprays the solutions on a front surface of the wafer and a rear side nozzle(234) which sprays the solutions on a rear surface of the wafer.
申请公布号 KR20090123237(A) 申请公布日期 2009.12.02
申请号 KR20080049212 申请日期 2008.05.27
申请人 SILTRON INC. 发明人 CHOI, EUN SUCK;KANG, HEE BOG
分类号 H01L21/304;H01L21/306 主分类号 H01L21/304
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