发明名称 |
APPARATUS AND METHOD FOR WAFER TREATMENT IN A SINGLE PIECE TYPE, AND APPARATUS AND METHOD FOR MANUFACTURING EPITAXIAL WAFER USING THE SAME |
摘要 |
PURPOSE: A single wafer processing apparatus, an apparatus and a method for manufacturing an epitaxial wafer using the same are provided to perform a wafer process of high efficiency and high quality by supplying a cleaning solution and an etching solution suitable for a front surface and a rear surface of a wafer. CONSTITUTION: A single wafer processing apparatus includes a plurality of rotating bodies(210) in which a wafer(10) is mounted, a rotary shaft(220) for rotating the rotating bodies, and a spray unit which sprays a cleaning solution and an etching solution on the wafer mounted in the rotating bodies. A groove is formed according to an outer circumference of a side surface of the rotating bodies. The wafer is mounted by fixing an edge of the wafer to the groove. The rotary shaft rotates each rotating body around a central shaft of the rotating bodies. The spray unit includes a front side nozzle(232) which sprays the solutions on a front surface of the wafer and a rear side nozzle(234) which sprays the solutions on a rear surface of the wafer.
|
申请公布号 |
KR20090123237(A) |
申请公布日期 |
2009.12.02 |
申请号 |
KR20080049212 |
申请日期 |
2008.05.27 |
申请人 |
SILTRON INC. |
发明人 |
CHOI, EUN SUCK;KANG, HEE BOG |
分类号 |
H01L21/304;H01L21/306 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|