| 摘要 |
<p>A cell is provided with rear side surface passivation, the solar cell comprising a silicon semiconductor 1 whereby the front face accepts incident light; at least one dielectric layer 10,7 deposited on the back face of the silicon semiconductor 1 by a method of chemical vapour deposition; at least one sacrificial layer 6 deposited on the at least one dielectric layer 10 also by chemical vapour deposition, the material of the sacrificial layer 6 being known to be subjected to aluminium spiking; a protrusion 9 whereby an area of the dielectric and sacrificial layers are removed to allow for metal contacts; and a metal layer 8 covering the entire rear surface of the silicon semiconductor 1 including the dielectric 7,10 and sacrificial layers 6 and into the protrusion 9, the silicon semiconductor 1 is then heated to an elevated temperature to obtain good ohmic contact between the metal 8 and the silicon semiconductor 1. During heating the metal layer 8 will degrade the sacrificial layer 6 due to spiking but increase adhesion, the metal 8 and semiconductor 1 will also alloy together to form a better ohmic contact.</p> |
