发明名称 |
THIN FILM DIELECTRICS WITH CO-FIRED ELECTRODES FOR CAPACITORS AND METHODS OF MAKING THEREOF |
摘要 |
PURPOSE: A thin film dielectric with a co-fired electrode for a capacitor and a manufacturing method thereof are provided to manufacture a large area capacitor with high yield by depositing a top electrode before annealing a dielectric thin film. CONSTITUTION: A substrate includes a first electrode or a bare metal foil. A dielectric layer is formed on the substrate by a sputtering or chemical solution deposition. A top conductive layer is deposited on the dielectric layer. The dielectric layer and the top conductive layer are annealed at a temperature more than 800°C at the same time. The dielectric layer has annealed thickness of 0.5~1.0um. The metal foil or the first electrode, the dielectric layer, and the top conductive layer form a capacitor. |
申请公布号 |
KR20090123844(A) |
申请公布日期 |
2009.12.02 |
申请号 |
KR20090110631 |
申请日期 |
2009.11.17 |
申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY;NORTH CAROLINA STATE UNIVERSITY |
发明人 |
BORLAND WILLIAM J.;DANIELS PATRICK;FACE DEAN W.;IHLEFELD JON FREDRICK;MARIA JON PAUL |
分类号 |
H01G4/40;H01G4/12;H01G4/33 |
主分类号 |
H01G4/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|