发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to make a silicon surface amorphous by including an ion injection process for forming a solid solution through reaction with silicon. CONSTITUTION: A gate insulation film(103) and a polysilicon film are formed on a semiconductor substrate(101). A laminate pattern is formed by etching the polysilicon film and the gate insulation film. A spacer film(107) and an etch stop film(109) are formed in a sidewall of the laminate pattern. A junction region(102) is formed by injecting a dopant ion to the semiconductor substrate of both sides of the laminate pattern. An ion is injected to the junction region and the polysilicon film, and forms a solid solution through reaction with the silicon. A metal film is formed on a top part of the polysilicon film and the junction region.</p> |
申请公布号 |
KR20090123090(A) |
申请公布日期 |
2009.12.02 |
申请号 |
KR20080048986 |
申请日期 |
2008.05.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YANG, CHEOL HOON;LEE, SEUNG CHEOL;SONG, PIL GEUN |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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